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Graduated from Ivan Franko National University (Lviv, Ukraine) in 2000 majoring in Physics of Semiconductors (M.Sc. equivalent) PhD in Condensed Physics from UNSW (2003-2007), QED group. Postdoc position at UNSW (2007-2008), QED group Postdoc position at Delft University of Technology (2008-2009), QT group Postdoc position at UNSW (2009-2013), ARC DECRA Fellow (2013-2016), Lecturer at UNSW Canberra (2018-2022).  Research interests: nanoelectronics, condensed matter physics, electronic transport measurements in quantum electronic devices,  semiconductor quantum wires and dots,  artificially designed electronic materials.

Over the last 18 years I have developed an expertise in field of low temperature transport measurements of nanoscale semiconductor devices. I have been working with a broad range of mesoscopic devices based on GaAs/AlGaAs material system. These include two, one and zero dimensional devices with both electrons and holes as charge carriers. As a CI of an ARC CoE in Future Low- Energy Electronics Technology, I work on realization of artificially designed electronic materials based on conventional semiconductor systems and nanopatterning techniques to fabricate two dimensional lateral superlattices.

Since 2006, I have published 69 papers, including Nature Communications (x1) (IF 11.7), Nano Letters (x7) (IF 14.887, the leading journal in the field of nanotechnology), Physical Review Letters (x6) (IF 7.36, the flagship journal of the American Physical Society) and Applied Physics Letters (x8) (IF 3.569, the number one applied physics journal). I have an overall h-index of 19 (WS), and my papers have been cited over 850 times. I have presented my research at major national and international conferences (total of 29 presentations), including 6 invited talks.

For Future Research Students: Ph.D. scholarships ($35,000 per year) are available for high achieving students (with H1 /High Distinction in UG and Masters by Research) in Physics or Electrical Engineering under my supervision. Please contact me for more details.