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Dr Michelle Vaqueiro Contreras

Dr Michelle Vaqueiro Contreras

Lecturer
Engineering
Photovoltaic and Renewable Energy Engineering

Dr. Vaqueiro Contreras currently holds an ACAP Postdoctoral fellowship at UNSW awarded in 2020 focusing on the applicationsÌýof graphene oxide multilayer films for solar cells. SheÌýcompleted a PhDÌýin Electrical and Electronic Engineering in 2018 at the University of Manchester and working at the National Graphene Institute, focusing on the identification of light element impurities responsible for high minority carrier recombination in silicon and the application of graphene oxide as new passivation material. Her findings on the recombination mechanisms relating C-O-H interactions in silicon have proven to be of high impact to the solar cell industry as hydrogen introduction in silicon is mostly recognized as advantageous.ÌýShe has extensive experience in a variety of electrical characterisation of defects in silicon, surface characterisation, micro-fabrication and dielectric deposition techniques. She is interested in novel passivation materials and processes compatible with large-scale manufacture for high-efficiency solar cells, as well as in the identification and mitigation of defects in silicon.

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Location
Room 309, Tyree Building
  • Book Chapters | 2024
    Contreras MV, 2024, 'Carrier-Induced Degradation', in Photovoltaic Solar Energy: From Fundamentals to Applications, Volume 2, pp. 103 - 122,
    Book Chapters | 2023
    Contreras MV; Li J; Kim M; Green MA, 2023, 'Solar photovoltaic technologies for mitigating global climate change', in Handbook on Climate Change and Technology, Edward Elgar, pp. 58 - 81,
    Book Chapters | 2021
    Chen R; Ciesla A; Vaqueiro-Contreras M; Chen D; Wright M; Hallam B; Peaker T, 2021, 'Negative impacts of hydrogen in silicon', in Hydrogen Passivation and Laser Doping for Silicon Solar Cells, pp. 249 - 303,
    Book Chapters | 2021
    Vaqueiro-Contreras M; Wright M; Chan C, 2021, 'Laser doping for rapid diffusion in silicon', in Hydrogen Passivation and Laser Doping for Silicon Solar Cells, Institution of Engineering and Technology, pp. 305 - 335,
  • Journal articles | 2023
    Juhl MK; Heinz FD; Coletti G; Rougieux FE; Sun C; Contreras MV; Niewelt T; Krich J; Schubert MC, 2023, 'On the Conversion between Recombination Rates and Electronic Defect Parameters in Semiconductors', IEEE Journal of Photovoltaics, 13, pp. 524 - 534,
    Journal articles | 2023
    Vaqueiro-Contreras M; Hallam B; Chan C, 2023, 'Review of Laser Doping and its Applications in Silicon Solar Cells', IEEE Journal of Photovoltaics, 13, pp. 373 - 384,
    Journal articles | 2022
    Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, 12, pp. 1369 - 1376,
    Journal articles | 2022
    Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, 12, pp. 1135 - 1141,
    Journal articles | 2021
    Chen D; Vaqueiro Contreras M; Ciesla A; Hamer P; Hallam B; Abbott M; Chan C, 2021, 'Progress in the understanding of light- and elevated temperature-induced degradation in silicon solar cells: A review', Progress in Photovoltaics: Research and Applications, 29, pp. 1180 - 1201,
    Journal articles | 2019
    Markevich VP; Vaqueiro-Contreras M; De Guzman JT; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Boron–Oxygen Complex Responsible for Light-Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem', Physica Status Solidi (A) Applications and Materials Science, 216,
    Journal articles | 2019
    Vaqueiro-Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells', Journal of Applied Physics, 125,
    Journal articles | 2018
    Markevich VP; Vaqueiro-Contreras M; Lastovskii SB; Murin LI; Halsall MP; Peaker AR, 2018, 'Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques', Journal of Applied Physics, 124,
    Journal articles | 2018
    Mullins J; Markevich VP; Vaqueiro-Contreras M; Grant NE; Jensen L; Jabłoński J; Murphy JD; Halsall MP; Peaker AR, 2018, 'Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states', Journal of Applied Physics, 124,
    Journal articles | 2018
    Vaqueiro-Contreras M; Bartlam C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2018, 'Graphene oxide films for field effect surface passivation of silicon for solar cells', Solar Energy Materials and Solar Cells, 187, pp. 189 - 193,
    Journal articles | 2018
    Vaqueiro-Contreras M; Markevich VP; Mullins J; Halsall MP; Murin LI; Falster R; Binns J; Coutinho J; Peaker AR, 2018, 'Lifetime degradation of n-type Czochralski silicon after hydrogenation', Journal of Applied Physics, 123,
    Journal articles | 2017
    Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon (Phys. Status Solidi RRL 8/2017)', physica status solidi (RRL) - Rapid Research Letters, 11, pp. 1770342 - 1770342,
    Journal articles | 2017
    Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon', Physica Status Solidi - Rapid Research Letters, 11,
  • Conference Papers | 2022
    Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings,
    Conference Papers | 2021
    Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271,
    Conference Papers | 2020
    Halsall MP; Vaqueiro Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2020, 'Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)', in Reed GT; Knights AP (ed.), Silicon Photonics XV, SPIE, pp. 33 - 33, presented at Silicon Photonics XV, 01 February 2020 - 06 February 2020,
    Conference Papers | 2019
    Vaqueiro-Contreras M; Walton AS; Bartlam C; Byrne C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2019, 'The surface passivation mechanism of graphene oxide for crystalline silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1931 - 1934,
    Conference Papers | 2017
    Santos P; Coutinho J; Öberg S; Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR, 2017, 'Theory of a carbon-oxygen-hydrogen recombination center in n-type Si', in Physica Status Solidi (A) Applications and Materials Science,

CONACyT-Manchester Scholarship of Quality Postgraduate Studies

CONACyT-SENER Scholarship of Quality Postgraduate Studies in Sustainable Energies

Distinguished Achievement Medal as Postgraduate of the Year at the University of Manchester (UK), given to one outstanding research student per faculty for research excellence during his/her postgraduate program.

My Research Supervision

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Zhuangyi Zhou (PhD student)

Keyi Shao (Thesis project A-C)